Lead growth on Si(111) surfaces reconstructed by indium.
Identifieur interne : 000C40 ( Main/Exploration ); précédent : 000C39; suivant : 000C41Lead growth on Si(111) surfaces reconstructed by indium.
Auteurs : RBID : pubmed:22301708English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Indium, Lead, Silicon.
- chemical , metabolism : Lead.
- Electrons, Microscopy, Scanning Tunneling, Photoelectron Spectroscopy, Surface Properties, Temperature, X-Ray Diffraction.
Abstract
We study the Pb growth on both √3 × √3-In and 4 × 1-In reconstructed Si(111) surfaces at room and low temperature (160 K). The study takes place with complementary techniques, to investigate the role of the substrate reconstruction and temperature in determining the growth mode of Pb. Specifically, we focus on the correlation between the growth morphology and the electronic structure of the Pb films. The information is obtained by using Auger electron spectroscopy, low energy electron diffraction, soft x-ray photoelectron spectroscopy, scanning tunneling microscopy and spot profile analysis-low energy electron diffraction. The results show that, at low temperature and coverage ≤12 ML on the Si(111)√3 × √3-In surface, Pb does not alter the initial semiconducting character of the substrate and three-dimensional Pb islands with poor crystallinity are grown on a wetting layer. On the other hand, for the same coverage range, Pb growth on the Si(111)4 × 1-In surface results in metallic Pb(111) crystalline islands after the completion of a double incomplete wetting layer. In addition, the bond arrangement of the adatoms is studied, confirming that In adatoms interact more strongly with the silicon substrate than the Pb ones. This promotes a stronger Pb-Pb interaction and enhances metallization. The onset of the metallization is correlated with the amount of pre-deposited In on the Si(111) surface. The decoupling of the Pb film from the 4 × 1-In interface can also explain the unusual thermal stability of the uniform height islands observed on this interface. The formation of these Pb islands is driven by quantum size effects. Finally, the different results of Pb growth on the two reconstructed surfaces confirm the importance of the interface, and also that the growth morphology, as well as the electronic structure of the Pb film can be tuned with the initial substrate reconstruction.
DOI: 10.1088/0953-8984/24/9/095006
PubMed: 22301708
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Lead growth on Si(111) surfaces reconstructed by indium.</title><author><name sortKey="Vlachos, D" uniqKey="Vlachos D">D Vlachos</name><affiliation wicri:level="1"><nlm:affiliation>Department of Physics, University of Ioannina, GR-451 10 Ioannina, Epirus, Greece. dvlachos@cc.uoi.gr</nlm:affiliation><country xml:lang="fr">Grèce</country><wicri:regionArea>Department of Physics, University of Ioannina, GR-451 10 Ioannina, Epirus</wicri:regionArea></affiliation></author><author><name sortKey="Kamaratos, M" uniqKey="Kamaratos M">M Kamaratos</name></author><author><name sortKey="Foulias, S D" uniqKey="Foulias S">S D Foulias</name></author><author><name sortKey="Binz, S" uniqKey="Binz S">S Binz</name></author><author><name sortKey="Hupalo, M" uniqKey="Hupalo M">M Hupalo</name></author><author><name sortKey="Tringides, M C" uniqKey="Tringides M">M C Tringides</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1088/0953-8984/24/9/095006</idno><idno type="RBID">pubmed:22301708</idno><idno type="pmid">22301708</idno><idno type="wicri:Area/Main/Corpus">000F20</idno><idno type="wicri:Area/Main/Curation">000F20</idno><idno type="wicri:Area/Main/Exploration">000C40</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electrons</term><term>Indium (chemistry)</term><term>Lead (chemistry)</term><term>Lead (metabolism)</term><term>Microscopy, Scanning Tunneling</term><term>Photoelectron Spectroscopy</term><term>Silicon (chemistry)</term><term>Surface Properties</term><term>Temperature</term><term>X-Ray Diffraction</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Indium</term><term>Lead</term><term>Silicon</term></keywords><keywords scheme="MESH" type="chemical" qualifier="metabolism" xml:lang="en"><term>Lead</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Electrons</term><term>Microscopy, Scanning Tunneling</term><term>Photoelectron Spectroscopy</term><term>Surface Properties</term><term>Temperature</term><term>X-Ray Diffraction</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We study the Pb growth on both √3 × √3-In and 4 × 1-In reconstructed Si(111) surfaces at room and low temperature (160 K). The study takes place with complementary techniques, to investigate the role of the substrate reconstruction and temperature in determining the growth mode of Pb. Specifically, we focus on the correlation between the growth morphology and the electronic structure of the Pb films. The information is obtained by using Auger electron spectroscopy, low energy electron diffraction, soft x-ray photoelectron spectroscopy, scanning tunneling microscopy and spot profile analysis-low energy electron diffraction. The results show that, at low temperature and coverage ≤12 ML on the Si(111)√3 × √3-In surface, Pb does not alter the initial semiconducting character of the substrate and three-dimensional Pb islands with poor crystallinity are grown on a wetting layer. On the other hand, for the same coverage range, Pb growth on the Si(111)4 × 1-In surface results in metallic Pb(111) crystalline islands after the completion of a double incomplete wetting layer. In addition, the bond arrangement of the adatoms is studied, confirming that In adatoms interact more strongly with the silicon substrate than the Pb ones. This promotes a stronger Pb-Pb interaction and enhances metallization. The onset of the metallization is correlated with the amount of pre-deposited In on the Si(111) surface. The decoupling of the Pb film from the 4 × 1-In interface can also explain the unusual thermal stability of the uniform height islands observed on this interface. The formation of these Pb islands is driven by quantum size effects. Finally, the different results of Pb growth on the two reconstructed surfaces confirm the importance of the interface, and also that the growth morphology, as well as the electronic structure of the Pb film can be tuned with the initial substrate reconstruction.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22301708</PMID><DateCreated><Year>2012</Year><Month>02</Month><Day>14</Day></DateCreated><DateCompleted><Year>2012</Year><Month>06</Month><Day>05</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-648X</ISSN><JournalIssue CitedMedium="Internet"><Volume>24</Volume><Issue>9</Issue><PubDate><Year>2012</Year><Month>Mar</Month><Day>7</Day></PubDate></JournalIssue><Title>Journal of physics. Condensed matter : an Institute of Physics journal</Title><ISOAbbreviation>J Phys Condens Matter</ISOAbbreviation></Journal><ArticleTitle>Lead growth on Si(111) surfaces reconstructed by indium.</ArticleTitle><Pagination><MedlinePgn>095006</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0953-8984/24/9/095006</ELocationID><Abstract><AbstractText>We study the Pb growth on both √3 × √3-In and 4 × 1-In reconstructed Si(111) surfaces at room and low temperature (160 K). The study takes place with complementary techniques, to investigate the role of the substrate reconstruction and temperature in determining the growth mode of Pb. Specifically, we focus on the correlation between the growth morphology and the electronic structure of the Pb films. The information is obtained by using Auger electron spectroscopy, low energy electron diffraction, soft x-ray photoelectron spectroscopy, scanning tunneling microscopy and spot profile analysis-low energy electron diffraction. The results show that, at low temperature and coverage ≤12 ML on the Si(111)√3 × √3-In surface, Pb does not alter the initial semiconducting character of the substrate and three-dimensional Pb islands with poor crystallinity are grown on a wetting layer. On the other hand, for the same coverage range, Pb growth on the Si(111)4 × 1-In surface results in metallic Pb(111) crystalline islands after the completion of a double incomplete wetting layer. In addition, the bond arrangement of the adatoms is studied, confirming that In adatoms interact more strongly with the silicon substrate than the Pb ones. This promotes a stronger Pb-Pb interaction and enhances metallization. The onset of the metallization is correlated with the amount of pre-deposited In on the Si(111) surface. The decoupling of the Pb film from the 4 × 1-In interface can also explain the unusual thermal stability of the uniform height islands observed on this interface. The formation of these Pb islands is driven by quantum size effects. Finally, the different results of Pb growth on the two reconstructed surfaces confirm the importance of the interface, and also that the growth morphology, as well as the electronic structure of the Pb film can be tuned with the initial substrate reconstruction.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Vlachos</LastName><ForeName>D</ForeName><Initials>D</Initials><Affiliation>Department of Physics, University of Ioannina, GR-451 10 Ioannina, Epirus, Greece. dvlachos@cc.uoi.gr</Affiliation></Author><Author ValidYN="Y"><LastName>Kamaratos</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Foulias</LastName><ForeName>S D</ForeName><Initials>SD</Initials></Author><Author ValidYN="Y"><LastName>Binz</LastName><ForeName>S</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Hupalo</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Tringides</LastName><ForeName>M C</ForeName><Initials>MC</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>02</Month><Day>03</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>J Phys Condens Matter</MedlineTA><NlmUniqueID>101165248</NlmUniqueID><ISSNLinking>0953-8984</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>2P299V784P</RegistryNumber><NameOfSubstance>Lead</NameOfSubstance></Chemical><Chemical><RegistryNumber>Z4152N8IUI</RegistryNumber><NameOfSubstance>Silicon</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Electrons</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Lead</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName><QualifierName MajorTopicYN="Y">metabolism</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Microscopy, Scanning Tunneling</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Photoelectron Spectroscopy</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Silicon</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Surface Properties</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Temperature</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">X-Ray Diffraction</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>2</Month><Day>03</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>2</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>2</Month><Day>4</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2012</Year><Month>6</Month><Day>6</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0953-8984/24/9/095006</ArticleId><ArticleId IdType="pubmed">22301708</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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